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improvement in electrical properties of hafnium and

Improvement in electrical properties of hafnium and ...

Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with

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Improvement in electrical properties of hafnium and ...

05/07/2006  Improvement in electrical properties of hafnium and zirconium silicates by postnitriding. Ito T(1), Kato H, Nango T, Ohki Y. Author information: (1)Department of Electrical Engineering and Bioscience, Waseda University, Shinjuku-ku, Tokyo 169-8555, Japan. Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties ...

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Improvement in electrical properties of hafnium and ...

19/06/2006  Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance–voltage

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Improvement in electrical properties of hafnium and ...

Hafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance-voltage (C-V)

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(PDF) Study of electrical properties of hafnium oxide thin ...

The electrical properties of hafnium oxide (HfO2) gate dielectric as a metal–oxide–semiconductor (MOS) capacitor structure deposited using pulse laser deposition (PLD) technique at optimum ...

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(PDF) Study of electrical and microstructure properties of ...

Hafnium oxide (HfO2) has emerged as the most promising highkdielectric for MOS devices. As-deposited sputtered HfO2 thin films have large number of defects resulting in increased oxide charge and leakage current. In this paper the effect of

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Hafnium - an overview ScienceDirect Topics

Brienne Johnson, Jacob L. Jones, in Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, 2019. Abstract. Hafnium dioxide (HfO 2) has long been known as a refractory material due to its high melting temperature (~ 2800°C) and low thermal conductivity (1.5 W/m K) [1, 2].Refractories are thermally insulating materials known to withstand high

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(PDF) Tunable electrical and optical properties of hafnium ...

The atomic structure, stability and electronic properties of zirconium and hafnium nitrides and oxynitrides (MN, M3N4, and M2N2O; M = Zr, Hf) have been studied using first-principles density ...

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(PDF) Study of electrical and microstructure properties of ...

The The improvement in the film properties is attributed to sputtered AlSi thin film about 600 nm was deposited on improvement in microstructure of the film. Surface mor- both side of the wafer, used as top electrode and back contact. The metal film was patterned using photolithog- -3 -3 raphy and metal etching. The minimum contact area was 10 10 10–4 cm2. The MOS structures were finally ...

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Hafnium - an overview ScienceDirect Topics

Brienne Johnson, Jacob L. Jones, in Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices, 2019. Abstract. Hafnium dioxide (HfO 2) has long been known as a refractory material due to its high melting temperature (~ 2800°C) and low thermal conductivity (1.5 W/m K) [1, 2].Refractories are thermally insulating materials known to withstand high temperatures without being ...

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Studies on Optical and Electrical Properties of Hafnium ...

10/03/2017  In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl4) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively

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Study of electrical properties of hafnium oxide thin film ...

Metal–insulator–metal (MIM) capacitors having hafnium oxide (HfO2) high-κ dielectric thin film were fabricated and subsequently studied for their electrical and micro-structural properties. The MIM capacitors were found to possess low leakage current density of about 2.7 × 10−9 A/cm2 at −1 V, high capacitance density of about 18.1 fF/μm2 at 0 V, 1 MHz and improved quadratic voltage ...

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Uniform Crystal Formation and Electrical Variability ...

In this paper, we achieved excellent variation control, endurance enhancement, and leakage reduction in zirconium (Zr)-doped hafnium oxide (Hf 1–x Zr x O 2) based ferroelectric films by the germination of large ferroelectric grains through extending the duration of rapid thermal annealing without increasing the temperature beyond 700 °C.

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Radiation effects on the electrical properties of hafnium ...

@article{osti_1027052, title = {Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.}, author = {Petrosky, J C and McClory, J W and Bielejec, Edward Salvador and Foster, J C}, abstractNote = {Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements ...

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Improving electrical conductivity and wear resistance of ...

01/08/2017  The highest electrical conductivity of Hf1-x Ta x N y films is 8.3×10 5 S m −1, which is 1.7 times and 5.2 times of that of hafnium nitride and tantalum nitride films, respectively. In addition, the lowest wear rate of films is 1.2×10 −6 mm 3 /N m, which is only 10% and 48% of that of hafnium nitride and tantalum nitride films, respectively.

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Hf Hafnium Element Information: Facts, Properties, Trends ...

Hafnium Electrical Properties. Hafnium is Conductor of electricity. Refer to table below for the Electrical properties of Hafnium Electrical Conductivity: 3.3×106 S/m: Resistivity: 3×10-7 m Ω : Superconducting Point: 0.128 ...

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Technical data for the element Hafnium in the Periodic Table

Electrical Conductivity: 3.3×10 6 S/m: Resistivity: 3×10-7 m Ω: Superconducting Point: 0.128: Magnetic properties: Magnetic Type: Paramagnetic: Curie Point: N/A: Mass Magnetic Susceptibility: 5.3×10-9 m 3 /Kg: Molar Magnetic Susceptibility: 9.46×10-10 m 3 /mol: Volume Magnetic Susceptibility: 0.0000705: Abundances % in Universe: 7×10-8 % % in Sun: 1×10-7 % % in Meteorites: 0.000017% ...

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(PDF) Tunable electrical and optical properties of hafnium ...

The atomic structure, stability and electronic properties of zirconium and hafnium nitrides and oxynitrides (MN, M3N4, and M2N2O; M = Zr, Hf) have been studied using first-principles density ...

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Study of electrical properties of hafnium oxide thin film ...

Metal–insulator–metal (MIM) capacitors having hafnium oxide (HfO2) high-κ dielectric thin film were fabricated and subsequently studied for their electrical and micro-structural properties. The MIM capacitors were found to possess low leakage current density of about 2.7 × 10−9 A/cm2 at −1 V, high capacitance density of about 18.1 fF/μm2 at 0 V, 1 MHz and improved quadratic voltage ...

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Electrical and structural properties of hafnium silicate ...

Abstract Thin (∼4 nm) hafnium silicate (HfO 2 ) x (SiO 2 ) 1− x /SiO 2 gate stacks (0 x 2 to 6 eV for Hf-silicate with 30% Hf. The permittivity was reduced from ∼21 for HfO 2 layers to ∼8 for Hf-silicate with x = 0.3. The results suggest that the optimal Hf content is above 0.6, for which the permittivity higher than 10 can be achieved.

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Hf Hafnium Element Information: Facts, Properties, Trends ...

Hafnium Electrical Properties. Hafnium is Conductor of electricity. Refer to table below for the Electrical properties of Hafnium Electrical Conductivity: 3.3×106 S/m: Resistivity: 3×10-7 m Ω : Superconducting Point: 0.128 ...

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Hafnium dioxide effect on the electrical properties of M/n ...

Hafnium dioxide effect on the electrical properties of M/n-GaN structure ... (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO 2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO ...

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Hafnium - Element information, properties and uses ...

Hafnium oxide is used as an electrical insulator in microchips, while hafnium catalysts have been used in polymerisation reactions. Biological role. Hafnium has no known biological role, and it has low toxicity. Natural abundance. Most zirconium ores contain around 5% hafnium. The metal can be prepared by reducing hafnium tetrachloride with sodium or magnesium. Help text not available for this ...

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Studies on Optical and Electrical Properties of Hafnium ...

In this paper, the synthesis and physico-chemical properties of hafnium oxide nanoparticles (HfO 2 NPs) are analyzed and reported. The synthesis was carried out by the precipitation route by using hafnium tetrachloride (HfCl 4 ) as precursor material with potassium hydroxide (KOH) dissolved in Millipore water. In the precipitation technique, the chemical reaction is comparatively simple, low ...

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Electrical properties of the Group IV disulfides, titanium ...

Electrical properties of the Group IV disulfides, titanium disulfide, zirconium disulfide, hafnium disulfide and tin disulfide. Lawrence E. Conroy

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Radiation effects on the electrical properties of hafnium ...

@article{osti_1027052, title = {Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.}, author = {Petrosky, J C and McClory, J W and Bielejec, Edward Salvador and Foster, J C}, abstractNote = {Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ capacitance versus voltage measurements ...

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Hafnium Oxide AMERICAN ELEMENTS

Hafnium Oxide is a highly insoluble thermally stable Hafnium source suitable for Limestone, optic and ceramic applications. Hafnium oxide is an inert, off-white powder also known as hafnia with a high melting point, it is among the most common and stable hafnium compounds. Hafnium Oxide is generally immediately available in most volumes.

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(PDF) Electrical and structural properties of hafnium ...

Due to its higher The electrical properties were assessed using current–volt- dielectric constant (about 20–25), pure HfO2 is considered age (IV) and high-frequency capacitance–voltage (HFCV) to be more scalable than Hf-silicates. On the other hand, techniques. The values obtained for optical bandgaps and despite its lower permittivity, Hf-silicate can yield lower dielectric

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Electrical and structural properties of hafnium silicate ...

Abstract Thin (∼4 nm) hafnium silicate (HfO 2 ) x (SiO 2 ) 1− x /SiO 2 gate stacks (0 x 2 to 6 eV for Hf-silicate with 30% Hf. The permittivity was reduced from ∼21 for HfO 2 layers to ∼8 for Hf-silicate with x = 0.3. The results suggest that the optimal Hf content is above 0.6, for which the permittivity higher than 10 can be achieved.

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(PDF) Electro-optic and electrical properties in Hafnium ...

We show that the electro-optic and dielectric properties are only slightly affected by the introduction of hafnium ions and therefore Hf-doped LN has the advantage of low photorefractive damage if compared with undoped congruent LN. Fax: +33-387-378559, E-mail: [email protected] 1 INTRODUCTION Thanks to its excellent piezo-electric, electro-optical, and nonlinear optical properties ...

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Tunable electrical and optical properties of hafnium ...

We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films'

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Tunable electrical and optical properties of hafnium ...

We report structural and electronic properties of epitaxial hafnium nitride films grown on MgO by plasma-assisted pulsed laser deposition. The electronic structure measured using soft x-ray absorption and emission spectroscopy is in excellent agreement with the results of a band structure calculation. We show that by varying the growth conditions we can extend the films’

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Hf Hafnium Element Information: Facts, Properties, Trends ...

Hafnium Electrical Properties. Hafnium is Conductor of electricity. Refer to table below for the Electrical properties of Hafnium Electrical Conductivity: 3.3×106 S/m: Resistivity: 3×10-7 m Ω : Superconducting Point: 0.128 ...

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Electrical and Magnetic Properties of Hafnium Disulfide ...

Simultaneous study of the dependences of the structural parameters, electrical, and magnetic properties of hafnium disulfide intercalated iron atoms in the dependence on the intercalate concentration and temperature has been performed for the first time. The temperature dependences of the electrical resistance are shown to exhibit the activation character with the

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Interfacial reactions and electrical properties of hafnium ...

T1 - Interfacial reactions and electrical properties of hafnium-based thin films in Cu/barrier/n+-p junction diodes. AU - Ou, Keng Liang. AU - Tsai, Ming Hung. AU - Huang, Haw Ming. AU - Chiou, Shi Yung. AU - Lin, Che Tong. AU - Lee, Sheng Yang. PY - 2005/2. Y1 - 2005/2. N2 - In this study, the barrier properties of Hf and nitrogen incorporated Hf films were

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Hafnium dioxide effect on the electrical properties of M/n ...

Hafnium dioxide effect on the electrical properties of M/n-GaN structure ... (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO 2) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of

More

Radiation effects on the electrical properties of hafnium ...

@article{osti_1027052, title = {Radiation effects on the electrical properties of hafnium oxide based MOS capacitors.}, author = {Petrosky, J C and McClory, J W and Bielejec, Edward Salvador and Foster, J C}, abstractNote = {Hafnium oxide-based MOS capacitors were investigated to determine electrical property response to radiation environments. In situ

More